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It took Only six years for Chinese manufacturers to catch up with Samsung and Micron, from 20 years behind

It took Only six years for Chinese manufacturers to catch up with Samsung and Micron, from 20 years behind

2022-06-24 11:51:22   Visit:24

Recently, it was reported that Changjiang Storage, a major Chinese memory chip manufacturer, has delivered 192-layer stacked 3D NAND flash chips to customers. The 232-layer stacked 3D NAND flash technology is expected to be implemented in late 2022 or early 2023.

This means that domestic memory chip manufacturers, finally catch up with Samsung, Micron. Remember that Micron just released the industry's first 232-stack 3D NAND Flash chip, and mass production and adoption won't happen until late 2022 or early 2023.

存储芯片从落后20年,到追上三星、美光,中国厂商只花了6年

Samsung is also expected to release more than 200 LAYERS of 3D NAND flash memory chips by 2022, and large-scale adoption will not happen until 2023.

Visible, domestic memory chip, in technology has really caught up with Samsung, Meguiar such a top factory, we are almost at the same level.

And carefully speaking, domestic memory chip from the previous 20 years behind, to now catch up with the top level, in fact, only took 6 years.

存储芯片从落后20年,到追上三星、美光,中国厂商只花了6年

Founded in 2016 with a total investment of 160 billion YUAN, Changjiang Storage is expected to build a total production capacity of 300,000 pieces/month and an annual output value of more than 10 billion US dollars. It will capture more than 20% of the global market share and become the world's well-known NAND flash memory manufacturer.

But in 2016, the domestic memory chip is basically a blank, behind the foreign level is at least 20 years. Therefore, many people are not optimistic about Changjiang storage, thinking that it may take a long time before it can catch up with Samsung, Micron and so on.

In 2017, It successfully developed China's first 3D NAND flash memory chip, and then achieved mass production in 2018. Although it lags behind many foreign countries, it has made a breakthrough of 0.存储芯片从落后20年,到追上三星、美光,中国厂商只花了6年

Later, Changjiang storage developed Xtacking architecture, which greatly improved the storage density. In September 2019, it launched 64-layer 3D NAND Flash based on its own Xtacking architecture, narrowing the gap with Samsung and Micron.

In April 2020, The company released 128-layer 3D NAND flash memory, once again narrowing the gap with Samsung and Micron.

Moreover, based on Xtacking architecture, Changjiang stores 128 stacked NAND flash chips, whose storage density reaches 8.48 Gb/mm? , far higher than Samsung, Micron, SK Hynix and other first-line NAND chip manufacturers.

Maybe a lot of people don't understand, what's the significance of the number of layers? In memory chips, the higher the stack number, the more advanced the technology, the higher the memory density, the lower the cost of the chip, the smaller the size.

存储芯片从落后20年,到追上三星、美光,中国厂商只花了6年

We originally thought that it might take several years for Changjiang storage to jump from the 128th floor to the 232nd floor. We never thought that when Micron and Samsung entered the 232nd floor, Changjiang Storage immediately caught up with them.

According to the agency's data, the market share of domestic memory chips is 4% in 2021, and can reach around 7% in 2022, and is expected to reach 12-15% in 2023.

This means that The Yangtze River storage really spent a little more than 6 years, the original behind at least 20 years of memory chip technology, catch up with the market is rapid growth, this is really too cattle.

And The Yangtze River storage also proved a fact to everyone, that is, as long as serious and solid to research and development, chip technology is not difficult to fall us.

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